pnp 2n2906 ? 2N2906A general purpose amplifiers transistors the 2n2906 and 2N2906A are pnp transistors mounted in to-18 metal package. they are intended for high speed switching and general purpose applications. npn complements are 2n2221 and 2n2221a . compliance to rohs absolute maximum ratings symbol ratings value unit 2n2906 2N2906A v ceo collector-emitter voltage (i b =0) -40 -60 v v cbo collector-base voltage (i e =0) -60 v v ebo emitter-base voltage (i c =0) -5 v i c collector current -600 ma i cm peak collector current -800 ma i bm peak base current -200 ma p d total power dissipation t amb = 25 0.4 w t case = 25 1.2 w t j junction temperature 200 c t stg storage temperature range -65 to +150 c t amb operating ambient temperature -65 to +150 c thermal characteristics symbol ratings value unit r thj-a thermal resistance, junction to ambient in free air 438 c/w r thj-c thermal resistance, junction to case 146 c/w
pnp 2n2906 ? 2N2906A 01/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit i cbo collector cutoff current v cb = -50 v i e = 0 t a = 25c 2N2906A - - -10 na 2n2906 - - -20 i cbo collector cutoff current t a = 150c 2N2906A - - -10 a 2n2906 - - -20 i ebo emitter cutoff current (*) v eb = -5 v, i c = 0 2N2906A - - -50 na 2n2906 v ceo collector emitter breakdown voltage i c = -10 ma, i b = 0 2N2906A -60 - - v 2n2906 -40 - - v cbo collector base breakdown voltage i c = -10 a, i e = 0 2N2906A -60 - - v 2n2906 v ebo emitter base breakdown voltage i e = -10 a, i c = 0 2N2906A -5 - - v 2n2906 h fe dc current gain i c = -0.1 ma, v ce = -10 v 2N2906A 40 - - - 2n2906 20 - - i c = -1 ma, v ce = -10 v 2N2906A 40 - - 2n2906 25 - - i c = -10 ma, v ce = -10 v 2N2906A 40 - - 2n2906 35 - - i c = -150 ma, v ce = -10 v 2N2906A 40 - 120 2n2906 i c = -500 ma, v ce = -10 v 2N2906A 40 - - 2n2906 20 - - v ce(sat) collector-emitter saturation voltage (*) i c = -150 ma, i b = -15 ma 2N2906A - - -0.4 v 2n2906 i c = -500 ma, i b = -50 ma 2N2906A - - -1.6 2n2906 v be(sat) base-emitter saturation voltage (*) i c = -150 ma, i b = -15 ma 2N2906A - - -1.3 2n2906 i c = -500 ma, i b = -50 ma 2N2906A - - -2.6 2n2906 f t transition frequency i c =-50 ma, v ce =-20 v f= 100mhz (*) 2N2906A 200 - - mhz 2n2906 t d delay time i c =-150 ma ,i b =-15 ma -v cc =-30 v 2N2906A - - 10 ns t r rise time 2n2906 - - 40 c c collector capacitance i e = i e = 0 ,v cb = -10 v f = 1 mhz 2N2906A - - 8 pf 2n2906 c e emitter capacitance i c = i c = 0 ,v eb = -2 v f = 1 mhz 2N2906A - - 30 pf 2n2906 (*) pulse conditions : tp < 300 s, =2%
pnp 2n2906 ? 2N2906A 01/10/2012 comset semiconductors 3 | 3 switching time symbol ratings test condition(s) min typ max unit t on turn-on time i con = -150 ma i bon = -15 ma i boff = 15 ma - - 45 ns t d delay time - - 15 t r rise time - - 35 t of f turn-off time - - 300 t s storage time - - 250 t f fall time - - 50 echanical data case to-18 (pnp) revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assu mes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. comset se miconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does comset semiconductors assu me any liability arising out of the applic ation or use of any product and specifica lly disclaims any and all liability, including without limitation consequential or inci dental damages. comset semicon ductors? products are not author ized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 12.7 - b - 0.49 c 0.9 - d - 5.3 e - 4.9 f - 5.8 g 2.54 - h - 1.2 i - 1.16 l 45 - pin 1 : emitter pin 2 : base pin 3 : collector case : collector
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